plastic medium-power complementary silicon transistors . . . designed for generalpurpose amplifier and lowspeed switching applications. ? high dc current gain e h fe = 2500 (typ) @ i c = 4.0 adc ? collector emitter sustaining voltage e @ 100 madc v ceo(sus) = 80 vdc (min) e bdx53b, 54b = 100 vdc (min) e bdx53c, 54c ? low collectoremitter saturation voltage e v ce(sat) = 2.0 vdc (max) @ i c = 3.0 adc = 4.0 vdc (max) @ i c = 5.0 adc ? monolithic construction with builtin baseemitter shunt resistors ? to220ab compact package ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ???? ? ?? ? ???? bdx53b bdx54b ???? ? ?? ? ???? bdx53c bdx54c ??? ? ? ? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 80 ???? ???? 100 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ???? ???? 80 ???? ???? 100 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 5.0 ??? ??? vdc ???????????? ???????????? collector current e continuous peak ???? ???? i c ??????? ??????? 8.0 12 ??? ??? adc ???????????? ???????????? base current ???? ???? i b ??????? ??????? 0.2 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 60 0.48 ??? ? ? ? ??? watts w/ c ???????????? ???????????? operating and storage junction temperature range ???? ???? t j , t stg ??????? ??????? 65 to +150 ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 70 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 70 ??? ??? c/w on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: bdx53b/d bdx53b bdx53c bdx54b bdx54c darlington 8 ampere complementary silicon power transistors 80100 volts 65 watts case 221a09 to220ab npn pnp style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 2 80 40 20 0 20 40 80 100 120 160 figure 1. power derating t, temperature ( c) p d , power dissipation (watts) 60 t a t c 4.0 2.0 1.0 3.0 0 60 140 t a t c
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 100 madc, i b = 0) bdx53b, bdx54b bdx53c, bdx54c ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 80 100 ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 40 vdc, i b = 0) bdx53b, bdx54b (v ce = 50 vdc, i b = 0) bdx53c, bdx54c ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 0.5 0.5 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 80 vdc, i e = 0) bdx53b, bdx54b (v cb = 100 vdc, i e = 0) bdx53c, bdx54c ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.2 0.2 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 3.0 adc, v ce = 3.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 750 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 adc, i b = 12 madc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 2.0 4.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 3.0 adc, i c = 12 ma) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.5 ??? ? ? ? ??? vdc ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 4.0 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) bdx53b, 53c bdx54b, 54c ????? ? ??? ? ????? c ob ??? ? ? ? ??? e e ???? ? ?? ? ???? 300 200 ??? ? ? ? ??? pf (1) pulse test: pulse width 300 m s, duty cycle 2%. figure 2. switching time test circuit 5.0 0.1 figure 3. switching times i c , collector current (amp) t, time (s) m 3.0 0.7 0.5 0.3 0.2 0.05 0.2 0.3 0.7 3.0 10 t d @ v be(off) = 0 v v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c t f 0.07 1.0 5.0 t s t r 0.1 1.0 2.0 0.5 2.0 7.0 0 v cc -30 v scope tut +4.0 v t r , t f 10 ns duty cycle = 1.0% r c d 1 must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 m s d 1 51 r b and r c varied to obtain desired current levels v 2 approx +8.0 v v 1 a pprox -12 v 8.0 k 120 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities r b
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 4 figure 4. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 r(t) effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 r q jc (t) = r(t) r q jc r q jc = 1.92 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 single pulse 0.03 0.3 3.0 30 300 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited 1.0 figure 5. activeregion safe operating area 20 2.0 0.05 10 20 100 t j = 150 c 0.2 5.0 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 10 30 70 1.0 0.1 dc 2.0 50 3.0 5.0 7.0 5.0 ms 1.0 ms 100 m s bdx53b, bdx54b bdx53c, bdx54c curves apply below rated v ceo 0.02 500 m s there are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10,000 1.0 figure 6. small-signal current gain f, frequency (khz) 10 2.0 5.0 10 20 50 100 200 1000 500 300 100 5000 h fe , small-signal current gain 20 3000 200 500 2000 1000 30 50 t j = 25 c v ce = 3.0 v i c = 3.0 a 300 0.1 figure 7. capacitance v r , reverse voltage (volts) 30 1.0 2.0 5.0 20 100 10 c, capacitance (pf) 200 100 70 50 t j = + 25 c c ib c ob 50 0.2 0.5 pnp npn pnp npn
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 5 0.1 figure 8. dc current gain i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 4.0 v 200 7.0 npn bdx53b, 53c pnp bdx54b, 54c 20,000 5000 10,000 3000 2000 1000 3.0 5.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 0.7 1.0 2.0 10 500 300 h fe , dc current gain t j = 150 c 25 c -55 c 200 7.0 20,000 5000 10,000 3000 2000 1000 3.0 5.0 v ce = 4.0 v v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 9. collector saturation region 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10 3.0 i b , base current (ma) 0.3 0.5 1.0 2.0 3.0 5.0 7.0 30 2.6 2.2 1.8 1.4 i c = 2.0 a t j = 25 c 4.0 a 6.0 a 1.0 0.7 20 10 i c , collector current (amp) v be(sat) @ i c /i b = 250 v, voltage (volts) figure 10. aono voltages i c , collector current (amp) v, voltage (volts) v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 t j = 25 c v be @ v ce = 4.0 v v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 250 t j = 25 c 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 10 7.0 3.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 6 v , temperature coefficient (mv/ c) q v , temperature coefficient (mv/ c) q +5.0 figure 11. temperature coefficients i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10 -55 to 150 c +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 q vb for v be * q vc for v ce(sat) -55 c to 25 c 25 c to 150 c 25 c to 150 c *i c /i b h fe/3 0.5 0.7 +2.0 npn bdx53b, bdx53c pnp bdx54b, bdx54c +5.0 i c , collector current (amp) 0.1 0.2 0.3 1.0 2.0 3.0 5.0 7.0 10 -55 to 150 c +4.0 +3.0 +1.0 0 -4.0 -1.0 -2.0 -3.0 -5.0 q vb for v be * q vc for v ce(sat) -55 c to 25 c 25 c to 150 c 25 c to 150 c *i c /i b h fe/3 0.5 0.7 +2.0 figure 12. collector cutoff region 10 5 v be , baseemitter voltage (volts) 10 2 10 1 10 0 , collector current (a) m i c 10 -1 +0.2 +0.4 0 -0.2 -0.4 -0.6 v ce = 30 v reverse forward 10 3 10 4 +0.6 +0.8 +1.0 +1.2 + 1.4 t j = 150 c 100 c 25 c 10 5 v be , baseemitter voltage (volts) 10 2 10 1 10 0 , collector current (a) m i c 10 -1 -0.2 -0.4 0 +0.2 +0.4 +0.6 v ce = 30 v t j = 150 c 100 c 25 c reverse forward 10 3 10 4 -0.6 -0.8 -1.0 -1.2 -1.4 figure 13. darlington schematic npn bdx53b bdx53c pnp bdx54b bdx54c base collector emitter 8.0 k 120 base collector emitter 8.0 k 120
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 7 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
bdx53b bdx53c bdx54b bdx54c http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bdx53b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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